Aluminum indium antimonide focal plane array
US8552480B2 · kind B2 · utility
1Cited by
4References
20Claims
0Family size
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Key dates
| Filing date | Jul 30, 2010 |
| Grant date | Oct 8, 2013 |
| Priority date | — |
| Expiry date | Jul 20, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
In one embodiment, a detector includes an AlzIn(1-x)Sb passivation/etch stop layer, an AlxIn(1-x)Sb absorber layer disposed above the Alzn(1-z)Sb passivation/etch stop layer, and an AlyIn(1-y)Sb passivation layer disposed above the AlxIn(1-x)Sb absorber layer, wherein x<z and x<y. The detector further includes a junction formed in a region of the AlxIn(1−x)Sb absorber layer, and a metal contact disposed above the junction and through the AlyIn(1-y)Sb passivation layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.