Heat dissipation structure for electronic device and fabrication method thereof
US8552554B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 20, 2011 |
| Grant date | Oct 8, 2013 |
| Priority date | — |
| Expiry date | Jan 17, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/4935
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A heat dissipation structure for an electronic device includes a body having a first surface and a second surface opposite to the first surface. A silicon-containing insulating layer is disposed on the first surface of the body. A chemical vapor deposition (CVD) diamond film is disposed on the silicon-containing insulating layer. A first conductive pattern layer is disposed on the silicon-containing insulating layer, wherein the first conductive pattern layer is enclosed by and spaced apart from the CVD diamond film. A method for fabricating a heat dissipation structure for an electronic device and an electronic package having the heat dissipation structure are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.