Alternate pad structures/passivation inegration schemes to reduce or eliminate IMC cracking in post wire bonded dies during Cu/Low-K BEOL processing
US8552560B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 18, 2005 |
| Grant date | Oct 8, 2013 |
| Priority date | — |
| Expiry date | Dec 25, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12396
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Passivation integration schemes and pad structures to reduce the stress gradients and/or improve the contact surface existing between the Al in the pad and the gold wire bond. One of the pad structures provides a plurality of recessed pad areas which are formed in a single aluminum pad. An oxide mesa can be provided under the aluminum pad. Another pad structure provides a single recessed pad area which is formed in a single aluminum pad, and the aluminum pad is disposed above a copper pad and a plurality of trench/via pads. Still another pad structure provides a single recessed pad area which is formed in a single aluminum pad, and the aluminum pad is disposed above a portion of a copper pad, such that the aluminum pad and the copper pad are staggered relative to each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.