Semiconductor memory device for data sensing
US8553484B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 21, 2011 |
| Grant date | Oct 8, 2013 |
| Priority date | — |
| Expiry date | Apr 6, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/4099
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor memory device includes a memory cell and a first reference memory cell. The memory cell includes a first switching element and a first capacitor for storing data. The first switching element is controlled by a first wordline, and has a first terminal connected to a first terminal of the first capacitor and a second terminal connected to a first bitline. The first capacitor has a second terminal for receiving a first plate voltage. The first reference memory cell includes a first reference switching element and a first capacitor. The first switching element is controlled by a first reference wordline, and has a first terminal connected to a first terminal of the first reference capacitor and a second terminal connected to a second bitline. The first reference capacitor has a second terminal receiving a first reference plate voltage different from the first plate voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.