FinFET LDD and source drain implant technique
US8557692B2 · kind B2 · utility
11Cited by
15References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 12, 2010 |
| Grant date | Oct 15, 2013 |
| Priority date | — |
| Expiry date | Nov 21, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming an integrated circuit includes providing a semiconductor wafer; and forming a fin field-effect transistor (FinFET) including implanting the semiconductor wafer using a hot-implantation to form an implanted region in the FinFET. The implanted region comprises a region selected from the group consisting essentially of a lightly doped source and drain region, a pocket region, and a deep source drain region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.