Semiconductor device and method for manufacturing semiconductor device
US8558244B2 · kind B2 · utility
2Cited by
1References
9Claims
0Family size
Assignee
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Key dates
| Filing date | Feb 4, 2011 |
| Grant date | Oct 15, 2013 |
| Priority date | — |
| Expiry date | Jul 19, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/111
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a semiconductor device includes a SiC layer of a first conductivity type, a SiC region of a second conductivity type, and a conductive layer of the second conductivity type. The SiC layer of the first conductivity type has a hexagonal crystal structure. The SiC region of the second conductivity type is formed in a surface of the SiC layer. The conductive layer of the second conductivity type is provided on the SiC region and is in contact with a portion of the SiC region including SiC of a cubic crystal structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.