Method of manufacturing a semiconductor device using a contact implant and a metallic recombination element and semiconductor

US8558308B1 · kind B1 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Oliver Blank · Villach, AT
• Michael Hutzler · Villach, AT
• David Laforet · Villach, AT
• Ralf Siemieniec · Villach, AT

Key dates

• Filing date: Jun 14, 2012
• Grant date: Oct 15, 2013
• Expiry date: Jun 14, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/667

Abstract

In a semiconductor die, source zones of a first conductivity type and body zones of a second conductivity type are formed. Both the source and the body zones adjoin a first surface of the semiconductor die in first sections. An impurity source is provided in contact with the first sections of the first surface. The impurity source is tempered so that atoms of a metallic recombination element diffuse out from the impurity source into the semiconductor die. Then impurities of the second conductivity type are introduced into the semiconductor die to form body contact zones between two neighboring source zones, respectively. The atoms of the metallic recombination element reduce the reverse recovery charge in the semiconductor die. Providing the body contact zones after tempering the platinum source provides uniform and reliable body contacts.