Semiconductor photodetector structure and the fabrication method thereof
US8558336B2 · kind B2 · utility
8Cited by
4References
14Claims
0Family size
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Key dates
| Filing date | Aug 17, 2009 |
| Grant date | Oct 15, 2013 |
| Priority date | — |
| Expiry date | Aug 16, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
A semiconductor photodetector structure is provided. The structure includes a substrate, a photodetecting element and a semiconductor layer disposed on the photodetecting element. The substrate includes a first semiconductor material and includes a deep trench. The surface of the deep trench includes a first type dopant. The photodetecting element is disposed in the deep trench. The photodetecting element includes a second semiconductor material. The semiconductor layer includes a second type dopant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.