Semiconductor device and method for manufacturing the same
US8558354B2 · kind B2 · utility
1Cited by
5References
5Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 21, 2011 |
| Grant date | Oct 15, 2013 |
| Priority date | — |
| Expiry date | Sep 23, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D8/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a semiconductor device includes a plurality of silicon films. The plurality of silicon films are disposed on one plane and are made of polysilicon containing an impurity. A crystal orientation of each of the silicon films is a (311) orientation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.