Spin tunneling magnetic element promoting free layer crystal growth from a barrier layer interface
US8559141B1 · kind B1 · utility
156Cited by
38References
13Claims
0Family size
Assignee
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Key dates
| Filing date | May 7, 2007 |
| Grant date | Oct 15, 2013 |
| Priority date | — |
| Expiry date | Dec 27, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A spin tunneling element includes a pinned layer, a barrier layer, and a free layer. The free layer includes a ferromagnetic layer including a ferromagnetic material that adjoins the barrier layer at a first interface. The free layer also includes a layer of amorphous material that adjoins the ferromagnetic layer at a second interface opposite the first interface. A first crystallization temperature of the ferromagnetic material at the first interface is lower than a second crystallization temperature at the second interface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.