Magnetic memory device and magnetic random access memory
US8559214B2 · kind B2 · utility
7Cited by
4References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 24, 2009 |
| Grant date | Oct 15, 2013 |
| Priority date | — |
| Expiry date | May 31, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/22
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic memory cell is provided with a magnetization record layer and a magnetic tunnel junction section. The magnetization record layer is a ferromagnetic layer having a perpendicular magnetic anisotropy. The magnetic tunnel junction section is used to read data from the magnetization record layer. The magnetization record layer has a plurality of domain wall motion regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.