Silicon etching liquid and etching method
US8562855B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 24, 2009 |
| Grant date | Oct 22, 2013 |
| Priority date | — |
| Expiry date | Apr 3, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/30608
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In etching processing of silicon, in particular anisotropic etching processing of silicon in a manufacturing step of MEMS parts, an etching liquid having a long life of etching liquid and an etching method are provided by suppressing a lowering of an etching rate at the time of warming which is characteristic of a hydroxylamine-containing etching liquid.A silicon etching liquid which is an alkaline aqueous solution containing an alkali metal hydroxide, hydroxylamine and an inorganic carbonate compound and having a pH of 12 or more and which is able to anisotropically dissolve monocrystalline silicon therein, and an etching method of silicon using this etching liquid are provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.