Wafer reclamation method and wafer reclamation apparatus
US8563332B2 · kind B2 · utility
0Cited by
3References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 25, 2008 |
| Grant date | Oct 22, 2013 |
| Priority date | — |
| Expiry date | Oct 23, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3065
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a wafer reclamation method for reclaiming a semiconductor wafer, on which a different material layer is formed, by removing the different material layer. The wafer reclamation method includes a physically removing step of physically removing the different material layer, a film forming step of forming a film on a surface of the semiconductor wafer from which the different material layer has been removed in the physically removing step, and a dry etching step of etching the semiconductor wafer by plasma together with the film formed in the film forming step.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.