Method of manufacturing laser diode device
US8563343B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 17, 2012 |
| Grant date | Oct 22, 2013 |
| Priority date | — |
| Expiry date | May 17, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/22
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of manufacturing a laser diode device includes: forming, in a semiconductor laser bar, separation trenches extending across all of a transverse dimension of the semiconductor laser bar and defining a mesa stripe, each of the separation trenches having wide portions located at longitudinal edge portions of the semiconductor laser bar and a narrow portion located in a longitudinal central portion of the semiconductor laser bar; scribing, in the semiconductor laser bar, grooves extending parallel to the separation trenches and terminating before reaching longitudinal edge portions of the semiconductor laser bar; and splitting the semiconductor laser bar along the grooves to form cleaved surfaces extending from a bottom surface of the semiconductor laser bar to bottom surfaces of the separation trenches.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.