Manufacturing semiconductor devices
US8563378B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 21, 2011 |
| Grant date | Oct 22, 2013 |
| Priority date | — |
| Expiry date | Sep 21, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/693
Abstract
A semiconductor device includes a semiconductor pattern on a substrate, gate structures on sidewalls of the semiconductor pattern, the gate structures being spaced apart from one another, insulating interlayers among the gate structures, wherein an uppermost insulating interlayer is lower than an upper face of the semiconductor pattern, a common source line contacting the substrate and protruding above the uppermost insulating interlayer, an etch stop layer pattern on the semiconductor pattern and on the common source line wherein the common source line protrudes above the uppermost insulating interlayer, an additional insulating interlayer on the uppermost insulating interlayer, and contact plugs extending through the additional insulating interlayer so as to make contact with the semiconductor pattern and the common source line, respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.