Method for manufacturing nitrogen compound semiconductor substrate and nitrogen compound semiconductor substrate, and method for manufacturing single crystal SiC substrate and single crystal SiC substrate
US8563442B2 · kind B2 · utility
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5Claims
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Key dates
| Filing date | Jun 9, 2009 |
| Grant date | Oct 22, 2013 |
| Priority date | — |
| Expiry date | Feb 8, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/035
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In order to provide a method for manufacturing a single crystal SiC substrate that can obtain an SiC layer with good crystallinity, an Si substrate 1 having a surface Si layer 3 of a predetermined thickness and an embedded insulating layer 4 is prepared, and when the Si substrate 1 is heated in a carbon-series gas atmosphere to convert the surface Si layer 3 into a single crystal SiC layer 6, the Si layer in the vicinity of an interface 8 with the embedded insulating layer 4 is left as a residual Si layer 5.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.