Technique to create a buried plate in embedded dynamic random access memory device

US8563446B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Ashima B. Chakravarti · Hopewell Junction, US
• Jacob B. Dadson · Wappingers Falls, US
• Paul Higgins · Sebastopol, US
• Babar A. Khan · Ossining, US
• John J. Moore · Newtown Square, US
• Christopher C. Parks · Beacon, US
• Rohit S. Takalkar · Wappingers Falls, US

Key dates

• Filing date: May 18, 2012
• Grant date: Oct 22, 2013
• Expiry date: May 18, 2032

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/957

Abstract

A method for forming a trench structure is provided for a semiconductor and/or memory device, such as an DRAM device. In one embodiment, the method for forming a trench structure includes forming a trench in a semiconductor substrate, and exposing the sidewalls of the trench to an arsenic-containing gas to adsorb an arsenic containing layer on the sidewalls of the trench. A material layer is then deposited on the sidewalls of the trench to encapsulate the arsenic-containing layer between the material layer and sidewalls of the trench.