Ultraviolet light emitting diode/laser diode with nested superlattice
US8563995B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 27, 2009 |
| Grant date | Oct 22, 2013 |
| Priority date | — |
| Expiry date | Aug 12, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/018
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A light emitting device with a template comprising a substrate and a nested superlattice. The superlattice has Al1-x-yInyGaxN wherein 0≦x≦α and 0≦y≦1 with x increasing with distance from said substrate. An ultraviolet light-emitting structure on the template has a first layer with a first conductivity comprising Al1-x-yInyGaxN wherein α≦x; a light emitting quantum well region above the first layer comprising Al1-x-yInyGaxN wherein α≦x≦b; and a second layer over the light emitting quantum well with a second conductivity comprising Al1-x-yInyGaxN wherein b≦x. The light emitting device also has a first electrical contact in electrical connection with the first layer, a second electrical contact in electrical connection with the second layer; and the device emits ultraviolet light.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.