Solid-state imaging device
US8564034B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 7, 2012 |
| Grant date | Oct 22, 2013 |
| Priority date | — |
| Expiry date | Sep 7, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/80373
Abstract
In a solid-state imaging device, a pixel has a first island-shaped semiconductor (P11) formed on a substrate (1) and a drive output circuit has second island-shaped semiconductors (4a to 4c) formed on the substrate at the same height as that of the first island-shaped semiconductor (P11). The first island-shaped semiconductor (P11) has a first gate insulating layer (6b) formed on an outer periphery thereof and a first gate conductor layer (105a) surrounding the first gate insulating layer (6b). The second island-shaped semiconductors (4a to 4c) have a second gate insulating layer (6a) formed on an outer periphery thereof and a second gate conductor layer (7a) surrounding the second gate insulating layer (6a). The first gate conductor layer (105a) and the second gate conductor layer (7a) have bottom portions located on the same plane.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.