Patent · US Active

Electronic fuse structure formed using a metal gate electrode material stack configuration

US8564089B2 · kind B2 · utility

5Cited by

2References

17Claims

0Family size

Assignee

GlobalFoundries Inc. · KY

Inventors

Andreas Kurz · Oberursel, DE
Christoph Schwan · Gebhardshain, DE
Jan Hoentschel · Dresden, DE

Key dates

Filing date	Nov 8, 2010
Grant date	Oct 22, 2013
Priority date	—
Expiry date	Feb 12, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/3011
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

In sophisticated semiconductor devices, electronic fuses may be provided on the basis of a replacement gate approach by using the aluminum material as an efficient metal for inducing electromigration in the electronic fuses. The electronic fuse may be formed on an isolation structure, thereby providing an efficient thermal decoupling of the electronic fuse from the semiconductor material and the substrate material, thereby enabling the provision of efficient electronic fuses in a bulk configuration, while avoiding incorporation of fuses into the metallization system.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.