Reference voltage generator having a two transistor design
US8564275B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 25, 2010 |
| Grant date | Oct 22, 2013 |
| Priority date | — |
| Expiry date | Aug 4, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG05F3/242
- WIPO fieldControl
- WIPO sectorInstruments
Abstract
An improved voltage reference generator is provided. The voltage reference generator comprises: a first transistor having a gate electrode biased to place the first transistor in a weak inversion mode; and a second transistor connected in series with said first transistor and having a gate electrode biased to place the second transistor in a weak inversion mode, where the threshold voltage of the first transistor is smaller than the threshold voltage of the second transistor and the gate electrode of the second transistor is electrically coupled to a drain electrode of the second transistor and the source electrode of the first transistor to form an output for a reference voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.