Process for purifying silicon source material by high gravity rotating packed beds
US8568597B2 · kind B2 · utility
Inventors
Key dates
| Filing date | May 10, 2010 |
| Grant date | Oct 29, 2013 |
| Priority date | — |
| Expiry date | Jan 16, 2032 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01B33/10784
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A process is disclosed for purification of silicon source material including trichlorosilane. First, the silicon source material in liquid state with impurities vapor and the other chlorosilane or silane are passing a first high gravity rotating packed bed with porous metal, at a temperature lower than the boiling point of the silicon source material, the impurities vapor and the other chlorosilane or silane are separated from the liquid silicon source material; second, the silicon source material in liquid state is fed to a second high gravity rotating packed bed, oxygen is also fed to the second high gravity rotating packed bed to form impurity-containing siloxane complexes with higher boiling point. Finally distilling to remove the impurity-containing siloxane complexes from the silicon source material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.