Substrate processing apparatus and substrate processing method using same
US8568606B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 30, 2010 |
| Grant date | Oct 29, 2013 |
| Priority date | — |
| Expiry date | May 10, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32165
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A substrate processing method uses a substrate processing apparatus including a chamber for accommodating a substrate, a lower electrode to mount the substrate, a first RF power applying unit for applying an RF power for plasma generation into the chamber, and a second RF power applying unit for applying an RF power for bias to the lower electrode. The RF power for plasma generation is controlled to be intermittently changed by changing an output of the first RF power applying unit at a predetermined timing. If no plasma state or an afterglow state exists in the chamber by a control of the first RF power applying unit, an output of the second RF power applying unit is controlled to be in an OFF state or decreased below an output of the second RF power applying unit when the output of the first RF power applying unit is a set output.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.