Multiple exposure photolithography methods
US8568960B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 13, 2012 |
| Grant date | Oct 29, 2013 |
| Priority date | — |
| Expiry date | Mar 13, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/12
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method that forms a film of photoresist composition on a substrate and exposes a first and second region of the film to radiation through a first and second mask having a first and second image pattern, respectively. The photoresist composition includes a polymer including labile group(s), base soluble group(s), a photosensitive acid generator, and a photosensitive base generator. The photosensitive acid generator generates first and second amounts of acid upon exposure to first and second doses of radiation, respectively. The second amount of acid exceeds the first amount of acid. The second dose of radiation exceeds the first dose of radiation. The photosensitive base generator generates a first and second amount of base upon exposure to the first and second dose of radiation, respectively. The first amount of base exceeds the first amount of acid. The second amount of acid exceeds the second amount of base.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.