Method for producing an optoelectronic semiconductor component

US8569079B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Elmar Baur · Wahrenholz, DE
• Alexander Heindl · Abensberg, DE
• Bernd Böhm · Regensburg, DE
• Patrick Rode · Regensburg, DE
• Heribert Zull · Regensburg, DE

Key dates

• Filing date: May 3, 2010
• Grant date: Oct 29, 2013
• Expiry date: Jun 18, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/819
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

A method for producing an optoelectronic semiconductor component includes providing a first wafer having a patterned surface, wherein the patterned surface is formed at least in places by elevations having first and second heights, wherein the first height is greater than the second height; providing a second wafer; applying a photoresist to outer areas of the second wafer; patterning a surface of the photoresist facing away from the second wafer by impressing the patterned surface of the first wafer into the photoresist, wherein the elevations are impressed as trenches having a first and second depth into the photoresist; applying a patterning method to the patterned surface of the photoresist, wherein the structure applied on the photoresist is transferred at least in places to the outer area of the second wafer.