Method of manufacturing strained source/drain structures
US8569139B2 · kind B2 · utility
5Cited by
10References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 27, 2010 |
| Grant date | Oct 29, 2013 |
| Priority date | — |
| Expiry date | Sep 17, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit device and method for manufacturing the integrated circuit device is disclosed. The disclosed method provides improved control over a surface proximity and tip depth of an integrated circuit device. In an embodiment, the method achieves improved control by forming a doped region and a lightly doped source and drain (LDD) region in a source and drain region of the device. The doped region is implanted with a dopant type opposite to the LDD region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.