Ambient infrared detection in solid state sensors
US8569681B2 · kind B2 · utility
3Cited by
12References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 11, 2010 |
| Grant date | Oct 29, 2013 |
| Priority date | — |
| Expiry date | Aug 29, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/806
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A solid state imaging device includes an array of active pixels and an infrared cut filter formed over the sensor. Optionally, a slot in the infrared cut filter allows infrared illumination to reach the sensor to be detected by pixels covered by a visually opaque filter and surrounded by pixels of special types that limit charge leakage and enable high dynamic range sensing of infrared illumination. A ratio of average infrared signal to average brightness indicates an amount of infrared illumination reaching the imaging device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.