High sensitivity, solid state neutron detector
US8569708B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 30, 2009 |
| Grant date | Oct 29, 2013 |
| Priority date | — |
| Expiry date | Apr 21, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/00
- WIPO fieldEnvironmental technology
- WIPO sectorChemistry
Abstract
An apparatus (200) for detecting slow or thermal neutrons (160) including an alpha particle-detecting layer (240) that is a hydrogenated amorphous silicon p-i-n diode structure. The apparatus includes a bottom metal contact (220) and a top metal contact (250) with the diode structure (240) positioned between the two contacts (220, 250) to facilitate detection of alpha particles (170). The apparatus (200) includes a neutron conversion layer (230) formed of a material containing boron-10 isotopes. The top contact (250) is pixilated with each contact pixel extending to or proximate to an edge of the apparatus to facilitate electrical contacting. The contact pixels have elongated bodies to allow them to extend across the apparatus surface (242) with each pixel having a small surface area to match capacitance based upon a current spike detecting circuit or amplifier connected to each pixel. The neutron conversion layer (860) may be deposited on the contact pixels (830) such as with use of inkjet printing of nanoparticle ink.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.