Nonvolatile memory with variable resistance change layers
US8569728B2 · kind B2 · utility
6Cited by
1References
16Claims
0Family size
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Key dates
| Filing date | Mar 22, 2010 |
| Grant date | Oct 29, 2013 |
| Priority date | — |
| Expiry date | Oct 25, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/71
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A nonvolatile memory device includes: a first conductive layer; a second conductive layer; a first resistance change layer provided between the first conductive layer and the second conductive layer and having an electrical resistance changing with at least one of an applied electric field and a passed current; and a first lateral layer provided on a lateral surface of the first resistance change layer and having an oxygen concentration higher than an oxygen concentration in the first resistance change layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.