E-mode high electron mobility transistors and methods of manufacturing the same
US8569769B2 · kind B2 · utility
15Cited by
13References
18Claims
0Family size
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Key dates
| Filing date | Jul 11, 2011 |
| Grant date | Oct 29, 2013 |
| Priority date | — |
| Expiry date | Jul 11, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/411
Abstract
An Enhancement-mode (E-mode) high electron mobility transistor (HEMT) includes a channel layer with a 2-Dimensional Electron Gas (2DEG), a barrier layer inducing the 2DEG in the channel layer, source and drain electrodes on the barrier layer, a depletion layer on the barrier layer between the source and drain electrodes, and a gate electrode on the depletion layer. The barrier layer is recessed below the gate electrode and the depletion layer covers a surface of the recess and extends onto the barrier layer around the recess.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.