Backside illuminated image sensor having capacitor on pixel region
US8569807B2 · kind B2 · utility
4Cited by
0References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 22, 2010 |
| Grant date | Oct 29, 2013 |
| Priority date | — |
| Expiry date | Nov 4, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/68
Abstract
A backside illuminated image sensor includes a semiconductor substrate having a front side and backside, a sensor element formed overlying the frontside of the semiconductor substrate, and a capacitor formed overlying the sensor element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.