Semiconductor device and manufacturing method thereof
US8569823B2 · kind B2 · utility
5Cited by
5References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 19, 2011 |
| Grant date | Oct 29, 2013 |
| Priority date | — |
| Expiry date | Nov 17, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
Abstract
According to one embodiment, a semiconductor device includes a semiconductor region, a tunnel insulating film provided on the semiconductor region, a charge storage insulating film provided on the tunnel insulating film and having a hafnium oxide including a cubic region, a block insulating film provided on the charge storage insulating film, and a control gate electrode provided on the block insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.