Nonvolatile semiconductor storage device
US8569825B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 14, 2010 |
| Grant date | Oct 29, 2013 |
| Priority date | — |
| Expiry date | Feb 27, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/27
Abstract
According to one embodiment, a manufacturing method of a nonvolatile semiconductor storage device, includes: forming a plurality of structures above a semiconductor substrate, each of the plurality of structures being such that in a stacked film where a plurality of first semiconductor films and a plurality of second semiconductor films are stacked alternately at least the second semiconductor films are held by a semiconductor or conductor pillar member via a gate dielectric film; selectively removing the first semiconductor films from the stacked film while maintaining a state where the second semiconductor films are held by the pillar member for each of the structures; oxidizing an exposed surface for each of the structures after removing the first semiconductor films; and embedding an inter-layer dielectric film between the plurality of structures in which the exposed surface is oxidized.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.