Transistor substrate dynamic biasing circuit
US8570096B2 · kind B2 · utility
3Cited by
24References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 14, 2011 |
| Grant date | Oct 29, 2013 |
| Priority date | — |
| Expiry date | Oct 20, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K19/0013
- WIPO fieldControl
- WIPO sectorInstruments
Abstract
A dynamic biasing circuit of the substrate of a MOS power transistor may include a first switch configured to connect the substrate to a current source which forward biases the intrinsic source-substrate diode of the transistor, when the gate voltage of the transistor turns the transistor on. The current source may include a stack of diodes in the same conduction direction as the intrinsic diode between the substrate and a supply voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.