Image sensors and methods of manufacturing image sensors
US8570409B2 · kind B2 · utility
11Cited by
1References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 22, 2010 |
| Grant date | Oct 29, 2013 |
| Priority date | — |
| Expiry date | Aug 31, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/9212
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An image sensor includes a first substrate including a driving element, a first insulation layer on the first substrate and on the driving element, a second substrate including a photoelectric conversion element, and a second insulation layer on the second substrate and on the photoelectric conversion element. A surface of the second insulation layer is on an upper surface of the first insulation layer. The image sensor includes a conductive connector penetrating the second insulation layer and a portion of the first insulation layer. Methods of forming image sensors are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.