Method for generating hollow cathode plasma and method for treating large area substrate using hollow cathode plasma
US8574445B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 5, 2009 |
| Grant date | Nov 5, 2013 |
| Priority date | — |
| Expiry date | May 3, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32596
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Provided are a method for generating hollow cathode plasma and a method for treating a large area substrate using the hollow cathode plasma. In the methods, the hollow cathode plasma is generated by a gas introduced between a hollow cathode in which a plurality of lower grooves where plasma is generated is defined in a bottom surface thereof and a baffle in which a plurality of injection holes is defined. A substrate disposed on a substrate support member is treated using the hollow cathode plasma passing through the injection holes. The uniform plasma having high density can be generated by hollow cathode effect due to the hollow cathode having the lower grooves and the injection holes of the baffle. Also, since the substrate can be treated using a hydrogen gas and a nitrogen gas in an ashing process, a damage of a low dielectric constant dielectric can be minimized.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.