Semiconductor optoelectronics structure with increased light extraction efficiency and fabrication method thereof
US8574939B2 · kind B2 · utility
1Cited by
3References
13Claims
0Family size
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Key dates
| Filing date | Jul 14, 2010 |
| Grant date | Nov 5, 2013 |
| Priority date | — |
| Expiry date | Nov 14, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/01335
Abstract
A semiconductor optoelectronic structure with increased light extraction efficiency and a fabrication method thereof are presented. The semiconductor optoelectronic structure includes continuous grooves formed under an active layer of the semiconductor optoelectronic structure to reflect light from the active layer and thereby direct more light through a light output surface so as to increase the light intensity from the semiconductor optoelectronic structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.