Method for manufacturing a gate-control diode semiconductor memory device

US8574958B2 · kind B2 · utility

Assignee

• FUDAN UNIVERSITY · CN

Inventors

• Pengfei Wang · Shanghai, CN
• Xiaoyong Liu · San Jose, US
• Qingqing Sun · Shanghai, CN
• Wei Zhang · Nanjing, CN

Key dates

• Filing date: Jun 27, 2012
• Grant date: Nov 5, 2013
• Expiry date: Jun 27, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D8/812

Abstract

This invention belongs to semiconductor device manufacturing field and discloses a method for manufacturing a gate-control diode semiconductor storage device. When the floating gate voltage is relatively high, the channel under the floating gate is of n type and a simple gate-control pn junction structure is configured; by controlling effective n-type concentration of the ZnO film through back-gate control, inverting the n-type ZnO into p-type through a floating gate and using NiO as a p-type semiconductor, an n-p-n-p doping structure is formed while the quantity of charges in the floating gate determines the device threshold voltage, thus realizing memory functions. This invention features capacity of manufacturing gate-control diode memory devices able to reduce the chip power consumption through advantages of high driving current and small sub-threshold swing. This invention is applicable to semiconductor devices manufacturing based on flexible substrate and flat panel displays and floating gate memories, etc.