Method for forming semiconductor device
US8574978B1 · kind B1 · utility
1Cited by
6References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 11, 2012 |
| Grant date | Nov 5, 2013 |
| Priority date | — |
| Expiry date | Apr 11, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/68
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a semiconductor device includes firstly providing a gate structure disposed on a substrate and a first nitride material layer disposed on the gate structure, secondly performing a protective step to modify the first nitride material layer in the presence of oxygen, then forming a second nitride material layer on the substrate, and later performing a removal step to remove the second nitride material layer without substantially slashing the modified first nitride material layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.