Method for forming semiconductor device
US8574988B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 30, 2009 |
| Grant date | Nov 5, 2013 |
| Priority date | — |
| Expiry date | Jun 3, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/10
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a highly integrated semiconductor device having multiplayer conductive lines is presented. The method includes the operations of forming, etching, burying and forming. The first forming operation includes forming a line-type conductive layer on a semiconductor substrate including a buried gate to expose the gate. The etching operation includes etching the conductive layer to expose at least a region between one side of an active area defined in the semiconductor substrate and an opposite side of the neighboring active area, both the active areas being arranged next to each other in a major axis direction of the gate. The burying operation includes burying a first insulating film in the etched line-type conductive layer. The second forming operation includes forming a bit line passing through the center of the active area in a direction perpendicular to the major axis direction of the gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.