Direct bonding method with reduction in overlay misalignment
US8575002B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 28, 2011 |
| Grant date | Nov 5, 2013 |
| Priority date | — |
| Expiry date | Nov 16, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T156/1702
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for the direct bonding of a first wafer having an intrinsic curvature before bonding to a second wafer having an intrinsic curvature before bonding, at least one of the two wafers including at least one series of microcomponents. The method includes bringing the two wafers into contact with each other so as to initiate the propagation of a bonding wave therebetween while imposing a predefined bonding curvature in the form of a paraboloid of revolution on one of the two wafers depending at least upon the intrinsic curvature before bonding of the wafer that includes the microcomponents, with the other wafer being free to conform to the predefined bonding curvature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.