Contact formation method, semiconductor device manufacturing method, and semiconductor device
US8575023B2 · kind B2 · utility
4Cited by
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51Claims
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Key dates
| Filing date | Oct 23, 2009 |
| Grant date | Nov 5, 2013 |
| Priority date | — |
| Expiry date | Feb 10, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6743
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device manufacturing method which achieves a contact of a low resistivity is provided.In a state where a first metal layer in contact with a semiconductor is covered with a second metal layer for preventing oxidation, only the first metal layer is silicided to form a silicide layer with no oxygen mixed therein. As a material of the first metal layer, a metal having a work function difference of a predetermined value from the semiconductor is used. As a material of the second metal layer, a metal which does not react with the first metal layer at an annealing temperature is used.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.