Carbosilane precursors for low temperature film deposition
US8575033B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 11, 2012 |
| Grant date | Nov 5, 2013 |
| Priority date | — |
| Expiry date | Sep 11, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are processes for the low temperature deposition of silicon-containing films using carbosilane precursors containing a carbon atom bridging at least two silicon atoms. Certain methods comprise providing a substrate; in a PECVD process, exposing the substrate surface to a carbosilane precursor containing at least one carbon atom bridging at least two silicon atoms; exposing the carbosilane precursor to a low-powered energy sourcedirect plasma to provide a carbosilane at the substrate surface; and densifying the carbosilanestripping away at least some of the hydrogen atoms to provide a film comprising SiC. The SiC film may be exposed to the carbosilane surface to a nitrogen source to provide a film comprising SiCN.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.