Repair of damaged surface areas of sensitive low-K dielectrics of microstructure devices after plasma processing by in situ treatment

US8575041B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Matthias Schaller · Dresden, DE
• Daniel Fischer · Furth, DE
• Thomas Oszinda · Dresden, DE

Key dates

• Filing date: Sep 15, 2011
• Grant date: Nov 5, 2013
• Expiry date: Jan 26, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02203
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Damaged surface areas of low-k dielectric materials may be efficiently repaired by avoiding the saturation of dangling silicon bonds after a reactive plasma treatment on the basis of OH groups, as is typically applied in conventional process strategies. The saturation of the dangling bond may be accomplished by directly initiating a chemical reaction with appropriate organic species, thereby providing superior reaction conditions, which in turn results in a more efficient restoration of the dielectric characteristics.