Silicon carbide semiconductor device and method of manufacturing the same
US8575648B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 22, 2010 |
| Grant date | Nov 5, 2013 |
| Priority date | — |
| Expiry date | Aug 4, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
Abstract
A silicon carbide semiconductor device having a JFET or a MOSFET includes a semiconductor substrate and a trench. The semiconductor substrate has a silicon carbide substrate, a drift layer on the silicon carbide substrate, a first gate region on the drift layer, and a source region on the first gate region. The trench has a strip shape with a longitudinal direction and reaches the drift layer by penetrating the source region and the first gate region. The trench is filled with a channel layer and a second gate region on the channel layer. The source region is not located at an end portion of the trench in the longitudinal direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.