Lateral-diffusion metal-oxide semiconductor device
US8575691B2 · kind B2 · utility
7Cited by
5References
9Claims
0Family size
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Key dates
| Filing date | Mar 24, 2010 |
| Grant date | Nov 5, 2013 |
| Priority date | — |
| Expiry date | Mar 30, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/663
Abstract
A method for fabricating a lateral-diffusion metal-oxide semiconductor (LDMOS) device is disclosed. The method includes the steps of: providing a semiconductor substrate; forming a first region and a second region both having a first conductive type in the semiconductor substrate, wherein the first region not contacting the second region; and performing a thermal process to diffuse the dopants within the first region and the second region into the semiconductor substrate to form a deep well, wherein the doping concentration of the deep well is less than the doping concentration of the first region and the second region.
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