Storage element and memory
US8575711B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 29, 2006 |
| Grant date | Nov 5, 2013 |
| Priority date | — |
| Expiry date | May 15, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/80
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A storage element includes a storage layer configured to hold information by use of a magnetization state of a magnetic material, with a pinned magnetization layer being provided on one side of the storage layer, with a tunnel insulation layer, and with the direction of magnetization of the storage layer being changed through injection of spin polarized electrons by passing a current in the lamination direction, so as to record information in the storage layer, wherein a spin barrier layer configured to restrain diffusion of the spin polarized electrons is provided on the side, opposite to the pinned magnetization layer, of the storage layer; and the spin barrier layer includes at least one material selected from the group composing of oxides, nitrides, and fluorides.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.