Kazuhiro Bessho
153Patents
13h-index
24Co-inventors
86Inventor score
Filing activity: Feb 12, 1999 → Aug 29, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6483741B1 | Magnetization drive method, magnetic functional device, and magnetic apparatus | Physics | 82 | Expired |
| US6387476B1 | Magnetic functional element and magnetic recording medium | Emerging Cross-Sectional Technologies | 68 | Expired |
| US6178112A | Element exploiting magnetic material and addressing method therefor | Physics | 51 | Expired |
| US7026671B2 | Magnetoresistive effect element, magnetic memory device and manufacturing method of magnetoresistive effect element and magnetic memory device | Emerging Cross-Sectional Technologies | 47 | Expired |
| US6480412B1 | Magnetization control method, information storage method, magnetic functional device, and information storage device | Electricity | 45 | Expired |
| US7313015B2 | Storage element and memory including a storage layer a magnetization fixed layer and a drive layer | Electricity | 44 | Expired |
| US7262064B2 | Magnetoresistive effect element, magnetic memory element magnetic memory device and manufacturing methods thereof | Electricity | 26 | Expired |
| US6831314B2 | Magnetoresistive effect element and magnetic memory device | Electricity | 25 | Expired |
| US7315053B2 | Magnetoresistive effect element and magnetic memory device | Electricity | 25 | Expired |
| US7200036B2 | Memory including a transfer gate and a storage element | Electricity | 24 | Expired |
| US8565013B2 | Storage element and storage device | Electricity | 21 | Active |
| US6621731B2 | Magnetic memory device | Physics | 19 | Expired |
| US8842465B2 | Memory element and memory apparatus | Electricity | 13 | Active |
| US6879514B2 | Magnetoresistive element and magnetic memory unit | Physics | 10 | Expired |
| US8351603B2 | Random number generating device, random number generating method, and security chip | Physics | 10 | Active |
| US7034348B2 | Magnetoresistive effect element and magnetic memory device | Electricity | 9 | Expired |
| US6815745B2 | Tunnel magnetoresistive effect element, method of manufacturing tunnel magnetoresistive effect element and magnetic memory device | Electricity | 9 | Expired |
| US8018759B2 | Tunnel magnetic resistance effect memory | Emerging Cross-Sectional Technologies | 9 | Active |
| US8637947B2 | Memory element and memory apparatus | Electricity | 9 | Active |
| US8854876B2 | Perpendicular magnetization storage element and storage device | Electricity | 9 | Active |
| US8976578B2 | Memory element and memory apparatus | Emerging Cross-Sectional Technologies | 9 | Active |
| US8575711B2 | Storage element and memory | Electricity | 8 | Active |
| US8699264B2 | Memory element and memory apparatus | Physics | 8 | Active |
| US8436438B2 | Memory element and memory device | Physics | 7 | Active |
| US6990014B2 | Magnetoresistive element and magnetic memory unit | Physics | 6 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.