Semiconductor device having a conductive structure including oxide and non oxide portions
US8575753B2 · kind B2 · utility
40Cited by
13References
32Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 25, 2010 |
| Grant date | Nov 5, 2013 |
| Priority date | — |
| Expiry date | Nov 9, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes an interlayer insulating layer disposed on a substrate, the interlayer insulating layer comprising an opening exposing the substrate, a barrier layer pattern disposed within the opening, and a conductive pattern disposed on the barrier layer pattern, the conductive pattern having an oxidized portion extending out of the opening and a non-oxidized portion within the opening, wherein a width of the conductive pattern is determined by a thickness of the barrier layer pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.