Patent · US Active

Semiconductor devices having electrodes

US8575760B2 · kind B2 · utility

15Cited by
4References
25Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 23, 2011
Grant dateNov 5, 2013
Priority date
Expiry dateNov 29, 2031

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/181
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor device includes a substrate having a first surface and an opposite second surface. An electrode extends within the substrate towards the first surface and has a protruding portion extending from the first surface. A supporting portion extends from the first surface of the substrate to a sidewall of the protruding portion and supports the protruding portion.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.